Charge-stripe crystal phase in an insulating cuprate
Charge-stripe crystal phase in an insulating cuprate
复制标题
DOI：
10.1038/s41563-018-0243-x
复制
发表时间：
2018-12
期刊：
影响因子：
41.2
通讯作者：
He Zhao;Zheng Ren;B. Rachmilowitz;J. Schneeloch;R. Zhong;G. Gu;Ziqiang Wang;I. Zeljkovic
中科院分区：
文献类型：
--
作者：
He Zhao;Zheng Ren;B. Rachmilowitz;J. Schneeloch;R. Zhong;G. Gu;Ziqiang Wang;I. Zeljkovic
铜酸盐的高温超导性是由反铁磁Mott绝缘体的载流子掺杂引起的。这种载流子掺杂导致电子液晶相的形成。绝缘电荷条纹晶体相预测形成时，一个小密度的空穴掺杂到电荷转移绝缘体状态，-，但这个阶段还有待观察实验。在这里，我们使用表面退火来扩展Bi基铜氧化物的可达掺杂范围，并实现轻掺杂的电荷转移绝缘状态的铜氧化物Bi 2Sr 2CaCu 2 O 8 +x。在这种绝缘状态下的电荷转移间隙约为1 eV的顺序，我们的光谱成像扫描隧道显微镜测量提供了强有力的证据，单向的电荷条纹顺序与相称的4a 0周期沿着铜-O-铜键。值得注意的是，这种绝缘的电荷条纹晶体相的赝能隙和费米表面的形成开始之前的发展。我们的工作提供了新的洞察微观起源的电子不均匀性在高Tccuprates。
High-temperature (high-Tc) superconductivity in cuprates arises from carrier doping of an antiferromagnetic Mott insulator. This carrier doping leads to the formation of electronic liquid-crystal phases. The insulating charge-stripe crystal phase is predicted to form when a small density of holes is doped into the charge-transfer insulator state, –, but this phase is yet to be observed experimentally. Here, we use surface annealing to extend the accessible doping range in Bi-based cuprates and realize the lightly doped charge-transfer insulating state of the cuprate Bi2Sr2CaCu2O8+x. In this insulating state with a charge transfer gap on the order of ~1 eV, our spectroscopic imaging scanning tunnelling microscopy measurements provide strong evidence for a unidirectional charge-stripe order with a commensurate 4a0period along the Cu–O–Cu bond. Notably, this insulating charge-stripe crystal phase develops before the onset of the pseudogap and formation of the Fermi surface. Our work provides fresh insight into the microscopic origin of electronic inhomogeneity in high-Tccuprates.