Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.
Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.
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DOI：
10.1038/srep26552
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发表时间：
2016-05-20
影响因子：
4.6
通讯作者：
Němec P
中科院分区：
文献类型：
--
作者：
Bouška M;Pechev S;Simon Q;Boidin R;Nazabal V;Gutwirth J;Baudet E;Němec P
采用脉冲激光沉积技术制备了富锗碲的GeTe-Sb 2 Te 3（Ge 6Sb 2 Te 9，Ge 8 Sb 2 Te 11，Ge 10 Sb 2 Te 13，Ge 12 Sb 2 Te 15）非晶薄膜。为了评估沉积膜中GeTe含量对GST材料的物理化学性质的影响，使用具有能量色散X射线分析的扫描电子显微镜、X射线衍射和反射计、原子力显微镜、拉曼散射光谱、光学反射率、和薄层电阻温度依赖性以及可变角度光谱椭偏测量被用来表征沉积（非晶）和退火（结晶）层。在结晶时，薄膜的光学功能和电阻急剧变化，导致非晶相和晶相之间的大的光学和电学对比。薄膜的厚度、密度和粗糙度随晶化过程的变化而发生较大的变化。计算出Ge 8 Sb 2 Te 11、Ge 10 Sb 2 Te 13和Ge 12 Sb 2 Te 15层在405 nm处的反射率对比度高达~0.21。
Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.