High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
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DOI：
10.1002/adma.201201909
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发表时间：
2012-11-14
影响因子：
29.4
通讯作者：
Kim, Sunkook
中科院分区：
文献类型：
--
作者：
Choi, Woong;Cho, Mi Yeon;Kim, Sunkook
基于多层MoS 2晶体的光电晶体管被证明具有比单层MoS 2光电晶体管更宽的光谱响应和更高的光响应度。多层MoS 2光电晶体管还表现出高室温迁移率（>70 cm（2）V（-1）s（-1））、接近理想的亚阈值摆幅（类似于70 mV decade-1）、低操作栅极偏置（
Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (