Selective growth of carbon nanotubes on silicon protrusions
Selective growth of carbon nanotubes on silicon protrusions
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DOI：
10.1116/1.1885008
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发表时间：
2004-07
期刊：
影响因子：
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通讯作者：
Hideki Sato;K. Hata;H. Miyake;K. Hiramatsu;Yahachi Saito
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文献类型：
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作者：
Hideki Sato;K. Hata;H. Miyake;K. Hiramatsu;Yahachi Saito
报道了一种新颖且简单的碳纳米管场发射器阵列制造工艺。化学气相沉积（等离子体增强CVD和热CVD）和剥离工艺用于在突起的顶点上选择性生长CNT。碳纳米管阵列的场发射测量是通过在超高真空条件下获取电流-电压曲线来进行的。结果发现，通过带有 Ti 缓冲层的 TCVD 生长的 CNT 阵列具有最佳的 FE 特性。
A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.