Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection
Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection
复制标题
具有抑制空间电荷注入的非易失性铁电畴壁存储器的快速操作
DOI：
10.1021/acsami.2c05923
复制
发表时间：
2022
影响因子：
9.5
通讯作者：
An Quang Jiang
中科院分区：
文献类型：
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作者：
Wenjie Zhang;Chao Wang;Jun Jiang;An Quang Jiang
LiNbO3单晶中的微安级畴壁电流在非易失性铁电畴壁随机存取存储器和逻辑中具有高密度集成、超快运行速度和几乎无限开关周期的广阔应用前景。对于存储器的商业化来说，由于高场电荷注入，器件的可靠性和运行速度的提高面临着挑战。注入的电荷可以补偿屏蔽畴切换场并减少畴壁电流的畴壁边界电荷。在这项工作中，在X切割LiNbO3单晶的表面上制造了两种存储纳米单元，以研究几何依赖的电荷注入。由于尺寸驱动重构的出现，条带存储单元具有比没有松弛晶格匹配应力的钳位存储单元更小的矫顽场，这减少了低频电荷注入并提高了域切换速度。在5V的工作电压下，我们观察到条状单元的保留时间超过1周，开/关电流比为2×104，为集成高可靠性节能高密度畴壁存储器铺平了道路。
The microampere-level domain wall currents in LiNbO3 single crystals have promising applications in nonvolatile ferroelectric domain wall random access memory and logic with high-density integration, ultrafast operation speeds, and almost unlimited switching cycles. For the memory commercialization, the improvements of the reliability and operation speed of the devices are challenging due to the high-field charge injection. The injected charge could compensate the domain-wall boundary charge that screens the domain switching field and reduces the domain wall current. In this work, two kinds of memory nanocells were fabricated on the surfaces of X-cut LiNbO3 single crystals to study the geometry-dependent charge injection. The striped memory cell due to the appearance of the size-driven reconstruction has a smaller coercive field than that of a clamped memory cell without relaxation of the lattice matching stress, which reduces low-frequency charge injection and increases the domain switching speed. At an operating voltage of 5 V, we observed a retention time of more than 1 week and an on/off current ratio of 2 × 104 for a striped-like cell, paving the route to integrate energy-efficient high-density domain wall memory in high reliability.