P-V-T equation of state of boron carbide.

P-V-T equation of state of boron carbide.
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DOI:
10.1098/rsta.2022.0331
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发表时间:
2023-10-16
影响因子:
5
通讯作者:
Hemley, Russell J.
Hemley, Russell J.
中科院分区:
综合性期刊2区
文献类型:
--
作者:
Somayazulu, Maddury;Ahart, Muhtar;Meng, Yue;Ciezak, Jennifer;Velisavlevic, Nenad;Hemley, Russell J.

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我们报道了B4C在激光加热的金刚石砧细胞中至50 GPa和约2500 K的状态测量的P-V-T方程。我们得到了环境温度下P-V数据的三阶Birch-Murnaghan拟合,得到了体积模量K0为221(2)GPa,导数(dK/dP)0为3.3(1)。这些模型用于拟合mie - gren - neisen - debye模型和温度相关的Birch-Murnaghan状态方程,其中包括由热膨胀(α)估计的热压和温度相关的体积模量(dK0/dT)。将环境压力热膨胀系数(α0 + α1T)、gr<s:1> neisen γ(V) = γ0(V/V0)q和体积相关的Debye温度作为拟合的输入参数,发现它们足以描述本研究的整个P-T范围内的数据。本文是主题“探索具有挑战性的材料的长度尺度,时间尺度和化学(第一部分)”的一部分。
We report the P-V-T equation of state measurements of B4C to 50 GPa and approximately 2500 K in laser-heated diamond anvil cells. We obtain an ambient temperature, third-order Birch–Murnaghan fit to the P-V data that yields a bulk modulus K0 of 221(2) GPa and derivative, (dK/dP)0 of 3.3(1). These were used in fits with both a Mie–Grüneisen–Debye model and a temperature-dependent, Birch–Murnaghan equation of state that includes thermal pressure estimated by thermal expansion (α) and a temperature-dependent bulk modulus (dK0/dT). The ambient pressure thermal expansion coefficient (α0 + α1T), Grüneisen γ(V) = γ0(V/V0)q and volume-dependent Debye temperature, were used as input parameters for these fits and found to be sufficient to describe the data in the whole P-T range of this study. This article is part of the theme issue ‘Exploring the length scales, timescales and chemistry of challenging materials (Part 1)’.
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