Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal-Semiconductor-Metal Photodetectors
Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal-Semiconductor-Metal Photodetectors
复制标题
用于宽带高速金属-半导体-金属光电探测器的石墨烯横向异质结构的溶剂基软图案化
DOI：
10.1002/admt.201600241
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发表时间：
2017-02-01
影响因子：
6.8
通讯作者：
Hasan, Tawfique
中科院分区：
文献类型：
--
作者：
Xu, Yang;Ali, Ayaz;Hasan, Tawfique
溶剂对于二维材料及其功能化形式的合成、转移和器件制造至关重要。使用常见溶剂对这些材料的结构和性能进行可控调节可以为制造高性能器件铺平新的、令人兴奋的途径。然而，这一点尚未实现，因为溶剂对二维材料的影响还远未得到充分了解。以氟功能化化学气相沉积石墨烯（FG）为例，与传统的等离子蚀刻“硬图案化”方法相比，作者展示了一种基于溶剂的“软图案化”策略，使其能够选择性脱氟，以制造分辨率低至50 nm的石墨烯-FG横向异质结构。在该策略中，避免了石墨烯转移后图案化的氧等离子体蚀刻过程，并通过物理连续的原子薄片保留了高质量的表面，这对于高性能光电检测至关重要，尤其是在高速领域。所制造的横向石墨烯异质结构进一步用于演示高速金属-半导体-金属光电探测器（< 10 ns 响应时间），具有从深紫外（200 nm）到近红外（1100 nm）范围的宽带响应。由于“软图案化”策略带来的缺陷少得多的高质量表面，作者实现了高深紫外区域光响应性以及超快时间响应。该策略提供了一种独特且可扩展的方法来实现连续二维横向异质结构，并强调了启发高速光电器件未来设计的重要性。
Solvents are essential in synthesis, transfer, and device fabrication of 2D materials and their functionalized forms. Controllable tuning of the structure and properties of these materials using common solvents can pave new and exciting pathways to fabricate high-performance devices. However, this is yet to be materialized as solvent effects on 2D materials are far from well understood. Using fluorine functionalized chemical vapor deposited graphene (FG) as an example, and in contrast to traditional "hard-patterning" method of plasma etching, the authors demonstrate a solvent-based "softpatterning" strategy to enable its selective defluorination for the fabrication of graphene-FG lateral heterostructures with resolution down to 50 nm. In this strategy, the oxygen plasma etching process of patterning after graphene transfer is avoided and high quality surfaces are preserved through a physically continuous atomically thin sheet, which is critical for high performance photodetection, especially in the high-speed domain. The fabricated lateral graphene heterostructures are further employed to demonstrate a high speed metal-semiconductor- metal photodetector (< 10 ns response time), with a broadband response from deep-UV (200 nm) to near-infrared (1100 nm) range. Thanks to the high quality surface with much less defects due to the "soft-patterning" strategy, the authors achieve a high deep-UV region photoresponsivity as well as the ultrafast time response. The strategy offers a unique and scalable method to realize continuous 2D lateral heterostructures and underscores the significance of inspiring future designs for high speed optoelectronic devices.