Utilizing n-type vanadium oxide films as hole-extracting layers for small molecule organic photovoltaics
Utilizing n-type vanadium oxide films as hole-extracting layers for small molecule organic photovoltaics
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DOI：
10.1063/1.3607478
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发表时间：
2011-07
影响因子：
4
通讯作者：
I. Hancox;L. Rochford;D. Clare;P. Sullivan;T. Jones
中科院分区：
文献类型：
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作者：
I. Hancox;L. Rochford;D. Clare;P. Sullivan;T. Jones
我们报道了当热蒸发的氧化钒(V2OX)薄膜作为空穴提取层被结合在铟-锡氧化物(ITO)/亚酞菁(SubPc)界面处时，亚酞菁硼(SubPc)/富勒烯(C60)有机光伏(OPV)电池的电池性能得到提高。紫外光电子能谱(UPS)研究表明，V2OX薄膜具有高度的n型特征，其功函数为6.8 eV。这与最近报道的其他金属氧化物空穴提取层的数据很好地关联，与之前报道的V2OX薄膜的p型特征相反。当电池利用ITO/SubPc界面的V2OX层时，空穴提取的能级对准有了显著的改善，导致开路电压(VoC)和功率转换效率(ηp)大幅增加。
We report increased cell performance for boron subphthalocyanine chloride (SubPc)/fullerene (C60) organic photovoltaic (OPV) cells when thermally evaporated vanadium oxide (V2OX) thin films are incorporated as a hole-extracting layer at the indium-tin oxide (ITO)/SubPc interface. Ultra-violet photoemission spectroscopy (UPS) studies of the V2OX films reveal highly n-type character, with a large work function of 6.8 eV. This correlates well with recently reported data for other metal oxide hole-extracting layers, such as molybdenum oxide and tungsten oxide, in contrast to the p-type character previously reported for V2OX films. There is significant improvement in energy level alignment for hole-extraction when cells utilise the V2OX layer at the ITO/SubPc interface, resulting in substantial increases in open circuit voltage (VOC) and power conversion efficiency (ηp).