Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn
Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn
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DOI：
10.1063/1.125141
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发表时间：
1999-11-01
影响因子：
4
通讯作者：
Ketterson, JB
中科院分区：
文献类型：
--
作者：
Cho, SL;Ma, J;Ketterson, JB
报道了一种制备具有良好发光性能的多晶ZnO薄膜的简单方法：金属Zn膜的氧化。在室温下的光致发光（PL）的研究，波长在370和675 nm之间，我们已经观察到一个单一的激子峰约390 nm没有任何深能级发射和一个小的PL半峰全宽（23 meV），表明负责深能级发射的缺陷的浓度是可以忽略不计的。我们还观察到这些薄膜中的光泵激光作用。激光的阈值强度与9 MW/cm（2）相似。(C)1999年美国物理学会。[S0003-6951（99）03444-0]。
We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was similar to 9 MW/cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)03444-0].