Performance of InGaAs/InP Avalanche Photodiodes as Gated-Mode Photon Counters.
Performance of InGaAs/InP Avalanche Photodiodes as Gated-Mode Photon Counters.
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DOI：
10.1364/ao.37.002272
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发表时间：
1998-04
期刊：
影响因子：
1.9
通讯作者：
G. Ribordy;J. Gautier;H. Zbinden;N. Gisin
中科院分区：
文献类型：
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作者：
G. Ribordy;J. Gautier;H. Zbinden;N. Gisin
我们调查的性能单独的吸收倍增InGaAs/InP雪崩光电二极管作为单光子探测器为1.3-和1.55-妈妈波长。首先，我们研究后脉冲，并选择实验条件来限制这种影响。然后，我们比较了InGaAs/InP探测器与锗雪崩光电二极管，前者表现出较低的暗计数率。工作温度的影响进行了研究，这两个波长。在173 K和每门的暗计数概率为10（-4），检测效率为16%的1.3妈妈和7%的1.55妈妈。最后，给出了小于200 ps的时间分辨率。
We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-mum wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10(-4), detection efficiencies of 16% for 1.3 mum and 7% for 1.55 mum are obtained. Finally, a timing resolution of less than200 ps is demonstrated.