Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors
Wavelength-size hybrid Si-VO2 waveguide electroabsorption optical switches and photodetectors
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DOI：
10.1364/oe.23.003657
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发表时间：
2015-02-09
期刊：
影响因子：
3.8
通讯作者：
Poon, Joyce K. S.
中科院分区：
文献类型：
--
作者：
Joushaghani, Arash;Jeong, Junho;Poon, Joyce K. S.
利用二氧化钒（VO 2）的绝缘体-金属相变，实现了与硅（Si）波导兼容的微米和亚微米长度的超紧凑波导电吸收光开关和光电探测器。1 μ m长的Si-VO 2混合器件在λ = 1550 nm附近的100 nm宽带宽上获得了12 dB的高消光比和5 dB的插入损耗。该器件作为光电探测器工作，可以测量小于1 μ W的光功率，响应度超过10 A/W。混合Si-VO 2器件的体积比当今的有源Si光子器件小约100至1000倍，显示了在Si光子平台上集成过渡金属氧化物用于纳米级电光元件的可行性。(C)2015美国光学学会
Ultra-compact waveguide electroabsorption optical switches and photodetectors with micron- and sub-micron lengths and compatible with silicon (Si) waveguides are demonstrated using the insulator-metal phase transition of vanadium dioxide (VO2). A 1 mu m long hybrid Si-VO2 device is shown to achieve a high extinction ratio of 12 dB and a competitive insertion loss of 5 dB over a broad bandwidth of 100 nm near lambda = 1550 nm. The device, operated as a photodetector, can measure optical powers less than 1 mu W with a responsivity in excess of 10 A/W. With volumes that are about 100 to 1000 times smaller than today's active Si photonic components, the hybrid Si-VO2 devices show the feasibility of integrating transition metal oxides on Si photonic platforms for nanoscale electro-optic elements. (C) 2015 Optical Society of America