Electrical spin pumping of quantum dots at room temperature
Electrical spin pumping of quantum dots at room temperature
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DOI：
10.1063/1.1890469
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发表时间：
2005-03-28
影响因子：
4
通讯作者：
Petrou, A
中科院分区：
文献类型：
--
作者：
Li, CH;Kioseoglou, G;Petrou, A
我们报告了室温下 InAs/GaAs 自组装量子点 (QD) 自旋极化的电控制。这是通过从铁肖特基接触中注入自旋极化电子来实现的。量子点电致发光的圆偏振表明，InAs 量子点在 300 K 时获得了 5% 的电子自旋偏振，这对温度非常不敏感。这是由于维度降低而抑制了量子点中的自旋弛豫机制。这些结果表明，在固态半导体器件中显然可以实现基于自旋的操作的实用机制。 (C) 2005 年美国物理研究所。
We report on electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin-relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid-state semiconductor devices. (C) 2005 American Institute of Physics.