A V-Band GaN Power Amplifier with 34.9% PAE and 35.1 dBm Output Power
A V-Band GaN Power Amplifier with 34.9% PAE and 35.1 dBm Output Power
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A%20V-Band%20GaN%20Power%20放大器%20with%2034.9%%20PAE%20and%2035.1%20dBm%20Output%20Power
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
J. Kitchen
中科院分区：
文献类型：
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作者：
Pouria Pazhouhesh;J. Kitchen
这项工作提出了一种高效率，最高输出功率的GaN基功率放大器，目标是V波段的频率范围从65到71 GHz。在HRL的40 nm GaN T3 MMIC工艺中实现，并在AWR中进行模拟，在66 GHz处获得了34.9%的模拟峰值功率附加效率(PAE)。功率放大器由三级组成，输出级采用4：1威尔金森功率合成器。当输入功率为13dBm时，功率放大器的最大线性功率增益为13.3dBm，频率为68 GHz。当输入功率为23dBm时，最大输出功率为35.1dBm，频率为68 GHz。芯片尺寸为2.7×4.9mm2，仿真结果显示其功率密度高达245 mW/mm2。
This work presents a high efficiency, highest reported output power GaN-based power amplifier targeting the V-band frequency range from 65 to 71 GHz. Implemented in HRL’s 40 nm GaN T3 MMIC process and simulated in AWR, the presented power amplifier achieves a simulated peak power added efficiency (PAE) of 34.9% at 66 GHz. The PA is composed of three stages, and the output stage uses a 4:1 Wilkinson power combiner. The PA’s maximum linear power gain is 13.3 dB at 68 GHz for an input power of 13 dBm. The maximum output power at 1dB compression point is 35.1 dBm at 68 GHz, associated with an input power of 23 dBm. The chip size is 2.7×4.9mm2, thus demonstrating a high power density of 245 mW/mm2 in simulation.