Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time
Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time
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DOI：
10.1088/0957-4484/17/4/019
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发表时间：
2006-02-28
期刊：
影响因子：
3.5
通讯作者：
Kang, TW
中科院分区：
文献类型：
--
作者：
Park, CM;Park, YS;Kang, TW
用场发射扫描电子显微镜和光致发光测量方法研究了射频等离子体辅助分子束外延生长在Si(111)衬底上的GaN纳米棒的生长和光学性质随生长时间的变化。结果表明，由于相邻纳米棒的合并，纳米棒直径的生长速度在大约90min后开始增加。由于诱导缺陷的存在，高速生长的样品的光学性质发生了很大的变化。在富N条件下，无缺陷GaN纳米棒的临界直径类似于140 nm。
The growth and optical properties of GaN nanorods grown on Si(111) substrates by rf plasma assisted molecular-beam epitaxy are investigated by means of field emission scanning electron microscopy and photoluminescence measurements as a function of growth time. It is clearly demonstrated that the rate of growth of the nanorod diameter starts to increase after similar to 90 min because of the coalescence of neighbouring nanorods. And the optical properties of the samples grown at a high growth rate are dramatically changed due to induced defects. The critical diameter for defect-free GaN nanorods is determined as below similar to 140 nm under N-rich conditions.