Very high-mobility organic single-crystal transistors with in-crystal conduction channels
Very high-mobility organic single-crystal transistors with in-crystal conduction channels
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DOI：
10.1063/1.2711393
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发表时间：
2007-03-05
影响因子：
4
通讯作者：
Ogawa, S.
中科院分区：
文献类型：
--
作者：
Takeya, J.;Yamagishi, M.;Ogawa, S.
用提纯的红荧烯单晶和高密度有机硅烷自组装单分子膜制备了极高迁移率的有机晶体管。具有最小化表面能级的界面允许载流子在弱栅极电场下通过几个分子层深入到晶体中分布，使得内部沟道在传输性能中起着重要作用。晶体内载流子受界面散射机制的影响较小，晶体管的最大迁移率达到18 cm（2）/Vs，四端测量的无接触本征迁移率为40 cm（2）/Vs。这是有机晶体管有史以来报道的最高值。(c)2007年，美国物理学会。
Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, so that the inner channel plays a significant part in the transfer performance. With the in-crystal carriers less affected by scattering mechanisms at the interface, the maximum transistor mobility reaches 18 cm(2)/V s and the contact-free intrinsic mobility turned out to be 40 cm(2)/V s as the result of four-terminal measurement. These are the highest values ever reported for organic transistors. (c) 2007 American Institute of Physics.