Prospects and Limitations of Transition Metal Dichalcogenide Laser Gain Materials
Prospects and Limitations of Transition Metal Dichalcogenide Laser Gain Materials
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DOI：
10.1021/acs.nanolett.8b03729
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发表时间：
2019-01-01
期刊：
影响因子：
10.8
通讯作者：
Gies, C.
中科院分区：
文献类型：
--
作者：
Lohof, F.;Steinhoff, A.;Gies, C.
纳米激光器工作时使用最少量的活性材料和低损耗。在这种情况下，单层过渡金属二硫属化物（TMD）由于其高量子效率而被研究为下一代增益材料。我们提供的结果从微观增益计算高度激发TMD单层和指定的要求，以实现激光与四种常用的TMD半导体。我们的方法包括由于激发的载流子，触发直接到间接的带隙转变的带结构重正化。因此，我们预测翻转的增益，限制了激光操作是可能的激发制度。提供了一个参数化的峰值增益，是用来与速率方程理论相结合，以讨论实验上可访问的激光特性的后果。
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum efficiency. We provide results from microscopic gain calculations of highly excited TMD monolayers and specify requirements to achieve lasing with four commonly used TMD semiconductors. Our approach includes band-structure renormalizations due to excited carriers that trigger a direct-to-indirect band gap transition. As a consequence, we predict a rollover for the gain that limits the excitation regime where laser operation is possible. A parametrization of the peak gain is provided that is used in combination with a rate-equation theory to discuss consequences for experimentally accessible laser characteristics.