Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction
Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction
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DOI：
10.1063/1.2374669
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发表时间：
2006-11
影响因子：
3.2
通讯作者：
J. Ibáñez;R. Kudrawiec;J. Misiewicz;M. Schmidbauer;M. Henini;M. Hopkinson
中科院分区：
文献类型：
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作者：
J. Ibáñez;R. Kudrawiec;J. Misiewicz;M. Schmidbauer;M. Henini;M. Hopkinson
我们使用光反射率（PR）和高分辨率x射线衍射（HRXRD）测量来评估在不同表面取向的GaAs衬底上通过分子束外延生长的InxGa1−xAs1−yNy薄膜（x ~ 20%, y ~ 3%）的组成。我们工作的目的是研究衬底取向对N和In进入薄膜的影响。原则上，由于晶格间距取决于x和y，所以不能单独用HRXRD来表征InxGa1−xAs1−yNy薄膜的组成，我们发现结合PR和HRXRD数据可以确定样品的组成。我们的数据分析表明，N在（in, Ga）（As， N）中的掺入对衬底取向有一定的依赖性，尽管不像以前在Ga（As， N）中观察到的那么强。我们确定的样品的剪切变形势与纯二元化合物的线性插值得到的值有很大的不同，纯二元化合物的值已经得到了。
We have used photoreflectance (PR) and high-resolution x-ray diffraction (HRXRD) measurements to assess the composition of InxGa1−xAs1−yNy thin films (x∼20%, y∼3%) grown by molecular beam epitaxy on GaAs substrates with different surface orientations. The aim of our work is to investigate the effect of substrate orientation on the incorporation of N and In into the films. Whereas in principle the composition of the InxGa1−xAs1−yNy films cannot be characterized by HRXRD alone because lattice spacings depend on both x and y, we show that a combined analysis of the PR and HRXRD data allows us to determine the sample composition. Our data analysis suggests that the incorporation of N in (In, Ga)(As, N) exhibits some dependence on substrate orientation, although not as strong as previously observed in Ga(As, N). We determine shear deformation potentials for our samples that are sizably different than those obtained by linearly interpolating from the values of the pure binary compounds, which has already been o...