Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach
Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach
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使用氨进行 GaN 分子束外延生长的理论研究：速率方程方法
DOI：
10.1116/1.591405
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发表时间：
2000
影响因子：
1.4
通讯作者：
R. Venkat
中科院分区：
文献类型：
--
作者：
Wenning Fu;R. Venkat
III-V族氮化物在整个可见光谱的光电应用中得到了深入研究。尽管实现了商业器件以及材料和器件的加工的进步，但是对这些材料的加工和外延生长的理解是不完整的。在这项研究中，速率方程的方法提出了基于物理健全的表面过程，以研究分子束外延生长的GaN使用氨。在该模型中包括了Ga和氨的表面骑层及其相关动力学，如Ga和N在晶体中的结合和解吸。所有的地面过程的速率假定为Arrhenius型。模拟的Ga掺入率作为氨压力和衬底温度的函数与实验数据非常吻合。Ga掺入随NH3超压的增加而增加，并在大NH3超压时达到最大值。Ga的掺入速率在820 °C时出现一个峰值，这是由于Ga的掺入速率随温度的升高而增大。
III–V nitrides are intensely researched for optoelectronic applications spanning the entire visible spectrum. In spite of realization of commercial devices and advances in processing of materials and devices, the understanding of the processing and epitaxial growth of these materials is incomplete. In this study, a rate equation approach is proposed based on physically sound surface processes to investigate the molecular beam epitaxy growth of GaN using ammonia. A surface riding layer of Ga and ammonia and its associated dynamics such as incorporation of Ga and N in to the crystal and desorption are included in the model. Rates of all surface processes are assumed Arrhenius type. The simulated Ga incorporation rate as a function of ammonia pressure and substrate temperature are in excellent agreement with the experimental data. Ga incorporation increases with increasing NH3 overpressure and saturates at a maximum value at large NH3 overpressure. The Ga incorporation rate exhibits a peak at 820 °C due to c...