Hydrogen-associated disorder modes in amorphous Si:H films
Hydrogen-associated disorder modes in amorphous Si:H films
复制标题
非晶 Si:H 薄膜中与氢相关的无序模式
DOI：
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发表时间：
1980
期刊：
影响因子：
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通讯作者：
P. Taylor
中科院分区：
文献类型：
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作者：
W. Carlos;P. Taylor
NMR自旋-晶格弛豫速率T/sub 1/ /sup-1/ of /sup 1/H in..第阿尔法.. - Si：H薄膜在40 K附近出现最大值。T/sub 1/的大小、温度和频率依赖性都很好地由一个模型描述，该模型假设与一些氢原子相关联的无序模式耦合。结果表明，一些氢的网站可能有助于在差距的电子状态。
NMR spin-lattice relaxation rates T/sub 1/ /sup -1/ of /sup 1/H in ..cap alpha..-Si:H films exhibit a maximum near 40 K. Both the magnitude, the temperature, and frequences dependences of T/sub 1/ are well described by a model which assumes a coupling to disorder modes which are associated with some hydrogen atoms. Results suggest that some hydrogen sites may contribute to the electronic states within the gap.