A FIELD-EFFECT TRANSISTOR BASED ON LANGMUIR-BLODGETT-FILMS OF AN NI(DMIT)(2) CHARGE-TRANSFER COMPLEX
A FIELD-EFFECT TRANSISTOR BASED ON LANGMUIR-BLODGETT-FILMS OF AN NI(DMIT)(2) CHARGE-TRANSFER COMPLEX
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DOI：
10.1016/0040-6090(94)90603-3
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发表时间：
1994-05-15
期刊：
影响因子：
2.1
通讯作者：
PETTY, MC
中科院分区：
文献类型：
--
作者：
PEARSON, C;MOORE, AJ;PETTY, MC
利用Langmuir-Blodgett技术在镀金玻璃和硅衬底上沉积了多层结构的电荷转移配合物（n -十八烷基吡啶）-Ni(dmit)2，衬底上有一层热生长的二氧化硅。电容测量结果表明，沉积态和碘掺杂后的微晶层的相对介电常数分别为3.2和6.3。采用二极微配合物作为半导体层，建立了薄膜晶体管结构。通过对栅极施加电压，可以观察到在源极和漏极之间流动的电流的调制和饱和。在沉积状态下，电荷载流子的迁移率为2.4 × 10(-5) cm2 V-1 s-1，在掺杂碘后，迁移率为1.8 × 10(-1) cm2 V-1 s-1。
Multilayer structures of the charge transfer complex (N-octadecylpyridinium)-Ni(dmit)2 have been deposited by the Langmuir-Blodgett technique onto substrates of gold-coated glass and silicon with a thermally grown overlayer of silicon dioxide. Capacitance measurements have revealed values of relative permittivity of 3.2 and 6.3 for the dmit layers in the as-deposited state and after iodine doping respectively. Thin film transistor structures have been built up incorporating the dmit complex as the semiconducting layer. Modulation and saturation of a current flowing between source and drain by a voltage applied to the gate has been observed. The mobilities of the charge carriers in the dmit layers have been calculated as 2.4 x 10(-5) cm2 V-1 s-1 in the as-deposited state and 1.8 x 10(-1) cm2 V-1 s-1 after doping with iodine.