Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface
Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface
复制标题
在等离子处理的碲化镉表面上形成铝肖特基接触
DOI：
10.1143/jjap.43.6371
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发表时间：
2004
影响因子：
1.5
通讯作者：
M. Toguchi
中科院分区：
文献类型：
--
作者：
H. Toyama;A. Nishihira;M. Yamazato;A. Higa;T. Maehama;R. Ohno;M. Toguchi
研究了等离子体处理对Al肖特基电极CdTe辐射探测器整流特性和性能的影响。用Br-甲醇腐蚀CdTe表面的富Te层导致Al/CdTe肖特基接触整流性能下降。为了去除富Te层，进行等离子体处理。等离子体处理没有使CdTe表面粗糙化，并且其去除了富Te层。在Al/CdTe肖特基接触的电流-电压特性方面，经等离子体处理的样品的漏电流低于未经等离子体处理的样品。此外，在检测器性能方面，与等离子体处理的样品比没有等离子体处理的样品表现出更高的能量分辨率。我们使用等离子体处理的Al/CdTe/Pt探测器在59.5 keV处实现了1.6 keV FWHM的高能量分辨率，这与使用传统的Schottky型In/CdTe/Pt探测器获得的值相当。
We have studied the effect of plasma treatment on the rectification property and performance of the CdTe radiation detector with the Al Schottky electrode. The Te-rich layer on the CdTe surface etched with Br-methanol caused the degradation of the rectification property of the Al/CdTe Schottky contact. To remove the Te-rich layer, plasma treatment was carried out. The plasma treatment did not roughen the CdTe surface, and it removed the Te-rich layer. In terms of current–voltage characteristics of the Al/CdTe Schottky contact, the leakage current of the samples with plasma treatment was lower than that of the samples without plasma treatment. Moreover, in terms of detector performance, the samples with plasma treatment showed a higher energy resolution than those without plasma treatment. We achieved a high energy resolution of 1.6 keV FWHM at 59.5 keV using the plasma-treated Al/CdTe/Pt detector, which is comparable to the value obtained using a conventional Schottky-type In/CdTe/Pt detector.