Photoquantum Hall Effect and Light-Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures
Photoquantum Hall Effect and Light-Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures
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DOI：
10.1002/adfm.201805491
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发表时间：
2019-01-17
影响因子：
19
通讯作者：
Patane, Amalia
中科院分区：
文献类型：
--
作者：
Bhuiyan, Mahabub A.;Kudrynskyi, Zakhar R.;Patane, Amalia
电子电荷在两个范德华晶体界面上的转移可以支持一类新的功能器件的操作。在范德华半导体中，一个令人兴奋和快速增长的发展涉及“后过渡”金属硫族化合物InSe。本文报道了用n型InSe覆盖单层石墨烯的场效应光电晶体管。这些器件结构结合了铟硒的光敏性和石墨烯的独特电学特性。结果表明，光诱导的电荷在铟硒和石墨烯之间的转移提供了一种有效的方法来增加或减少石墨烯中的载流子密度，导致其电阻的变化是栅极可控的，仅弱依赖于温度。通过霍尔效应和光电导率测量探测了InSe/石墨烯界面上的电荷转移，并证明了光可以诱导石墨烯层中的量子霍尔电压和光伏效应的符号反转。这些发现证明了在用于光电子学和量子计量学的门可调谐InSe/石墨烯光晶体管中光诱导电荷转移的潜力。
The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the "post-transition" metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n-type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light-induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate-controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light-induced charge transfer in gate-tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.