Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001).
Tailoring the magnetic anisotropy of Py/Ni bilayer films using well aligned atomic steps on Cu(001).
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利用 Cu(001) 上良好排列的原子台阶调整 Py/Ni 双层薄膜的磁各向异性
DOI：
10.1038/srep11055
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发表时间：
2015-06-11
影响因子：
4.6
通讯作者：
Qiu ZQ
中科院分区：
文献类型：
--
作者：
Ma S;Tan A;Deng JX;Li J;Zhang ZD;Hwang C;Qiu ZQ
Tailoring the spin orientation at the atomic scale has been a key task in spintronics technology. While controlling the out-of-plane to in-plane spin orientation has been achieved by a precise control of the perpendicular magnetic anisotropy at atomic layer thickness level, a design and control of the in-plane magnetic anisotropy has not yet been well developed. On well aligned atomic steps of a 6° vicinal Cu(001) surface with steps parallel to the [110] axis, we grow Py/Ni overlayer films epitaxially to permit a systematic exploration of the step-induced in-plane magnetic anisotropy as a function of both the Py and the Ni film thicknesses. We found that the atomic steps from the vicinal Cu(001) induce an in-plane uniaxial magnetic anisotropy that favors both Py and Ni magnetizations perpendicular to the steps, opposite to the behavior of Co on vicinal Cu(001). In addition, thickness-dependent study shows that the Ni films exhibit different magnetic anisotropy below and above ~6 ML Ni thickness.
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影响因子：
1.6
作者：
Li, J.;Jin, E.;Qiu, Z. Q.
通讯作者：
Qiu, Z. Q.
影响因子：
8.6
作者：
PAPPAS, DP;KAMPER, KP;HOPSTER, H
通讯作者：
HOPSTER, H
影响因子：
3.7
作者：
Platow, W;Bovensiepen, U;Heinz, K
通讯作者：
Heinz, K
影响因子：
8.6
作者：
Uiberacker, C;Zabloudil, J;Sommers, C
通讯作者：
Sommers, C
影响因子：
8.6
作者：
BERGER, A;LINKE, U;OEPEN, HP
通讯作者：
OEPEN, HP