Spectral fluctuations of excitonic transitions of InGaAs single quantum dots
Spectral fluctuations of excitonic transitions of InGaAs single quantum dots
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InGaAs单量子点激子跃迁的光谱涨落
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
W. Jhe
中科院分区：
文献类型：
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作者：
W. Bak;H. Noh;C. Stambaugh;Y. Arakawa;W. Jhe
本文报道了InGaAs单量子点光谱扩散的实验研究。利用双锥针尖近场扫描光学显微镜，我们得到了随机起伏电场中单个量子点的量子限制斯塔克效应所引起的光谱扩散。这些电场来自量子点附近缺陷处的局部电荷。特别是，我们发现，类似的图案的时间抖动，看到在光谱扩散，从量子点发射，并依赖于激发密度和施加的偏置电压。
We report on our experimental study of spectral diffusion in grown InGaAs single quantum dots. Using a double-tapered tip, near-field scanning optical microscope, we obtain the spectral diffusion resulting from the quantum confined Stark effect of individual quantum dots in a randomly fluctuating electric field. These electric fields come from localized charges at defects in the vicinity of the quantum dots. In particular, we find that the similar-patterned temporal jitter, seen in the spectral diffusion, emits from a quantum dot and is dependent on the excitation density and applied bias voltage.