Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy
复制标题
化学束外延生长的 GaN 中氮掺入的三个生长温度依赖性区域
DOI：
--
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
H. Ishikawa
中科院分区：
文献类型：
--
作者：
Yijun Sun;M. Yamamori;T. Egawa;H. Ishikawa
研究了 340 至 515°C 的生长温度对化学束外延生长的 GaN 中氮掺入的影响。一般来说，随着生长温度的升高，氮含量降低。然而，在低、中和高生长温度下，可以分别识别出活化能分别为 0.59、0.05 和 0.95 eV 的氮掺入的三个不同的生长温度依赖性区域。在低和高生长温度下，氮掺入的生长温度依赖性分别归因于三乙基镓（TEG）热解和氮解吸控制过程，而在中等温度下观察到TEG传输限制过程。原子力显微镜 (AFM) 结果还表明，在不同生长温度下生长的 GaN 具有三种不同的表面形貌。根据X射线衍射(XRD)和AFM结果，确定了最佳生长机制，获得了高质量的GaN0.007As0.993/GaAs三量子阱。
The effects of growth temperature on nitrogen incorporation in GaNAs grown by chemical beam epitaxy are studied from 340 to 515°C. Generally speaking, with increasing growth temperature, nitrogen content decreases. However, three distinct growth-temperature-dependent regions for nitrogen incorporation with activation energies of 0.59, 0.05, and 0.95 eV can be identified at low, middle, and high growth temperatures, respectively. At low and high growth temperatures, the growth temperature dependences of nitrogen incorporation are due to triethylgallium (TEG)-pyrolysis- and nitrogen-desorption-controlled processes, respectively, while a TEG-transportation-limited process is observed at middle temperatures. Atomic force microscope (AFM) results also show that there are three different surface morphologies for GaNAs grown at different growth temperatures. Based on X-ray diffraction (XRD) and AFM results, the best growth mechanism is determined, and high quality GaN0.007As0.993/GaAs triple quantum wells are obtained.