Strain engineering of anisotropic light-matter interactions in one-dimensional P-P chain of SiP2
Strain engineering of anisotropic light-matter interactions in one-dimensional P-P chain of SiP2
复制标题
SiP2 一维 P-P 链中各向异性光与物质相互作用的应变工程
DOI：
10.1007/s12274-022-4315-5
复制
发表时间：
2022-05-13
期刊：
影响因子：
9.9
通讯作者：
Yuan, Hongtao
中科院分区：
文献类型：
--
作者：
Cheng, Fanghua;Huang, Junwei;Yuan, Hongtao
Strain engineering can serve as a powerful technique for modulating the exotic properties arising from the atomic structure of materials. Examples have been demonstrated that one-dimensional (1D) structure can serve as a great platform for modulating electronic band structure and phonon dispersion via strain control. Particularly, in a van der Waals material silicon diphosphide (SiP2), quasi-1D zigzag phosphorus-phosphorus (P-P) chains are embedded inside the crystal structure, and can show unique phonon vibration modes and realize quasi-1D excitons. Manipulating those optical properties by the atom displacements via strain engineering is of great interest in understanding underlying mechanism of such P-P chains, however, which remains elusive. Herein, we demonstrate the strain engineering of Raman and photoluminescence (PL) spectra in quasi-1D P-P chains and resulting in anisotropic manipulation in SiP2. We find that the phonon frequencies of SiP2 in Raman spectra linearly evolve with a uniaxial strain along/perpendicular to the quasi-1D P-P chain directions. Interestingly, by applying tensile strain along the P-P chains, the band gap energy of strained SiP2 can significantly decrease with a tunable value of similar to 55 meV. Based on arsenic (As) element doping into SiP2, the strain-induced redshifts of phonon frequencies decrease, indicating the stiffening of the phonon vibration with the increased arsenic doping level. Such results provide an opportunity for strain engineering of the light-matter interactions in the quasi-1D P-P chains of SiP2 crystal for potential optical applications.
