Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
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DOI：
10.1103/physrevb.82.075415
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发表时间：
2010-08-17
影响因子：
3.7
通讯作者：
Vyalikh, D. V.
中科院分区：
文献类型：
--
作者：
Usachov, D.;Adamchuk, V. K.;Vyalikh, D. V.
我们证明了在W（110）衬底上生长的Ni（111）薄膜可以通过在界面中嵌入Au原子来释放单原子厚层六方氮化硼（h-BN），使其与Ni（111）薄膜脱离紧密化学键。这个过程已经系统地研究了使用角度分辨光发射光谱，x射线光发射和吸收技术。研究表明，h-BN层从“刚性”到“准静止”状态的转变伴随着晶格常数的变化。利用化学气相沉积技术，成功地在绝缘、准直立的氢氮化硼单层上合成了石墨烯。我们预计，原位合成的弱相互作用石墨烯/h-BN双层体系可以进一步开发技术应用，并可能为进一步研究石墨烯的不同寻常的电子特性提供视角。
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.