Formation of Y2O3 interface layer in a YMnO3/Si ferroelectric gate structure
Formation of Y2O3 interface layer in a YMnO3/Si ferroelectric gate structure
复制标题
DOI：
10.1063/1.1332101
复制
发表时间：
2000-12
影响因子：
4
通讯作者：
J. Choi;J. Y. Lee;Y. Kim
中科院分区：
文献类型：
--
作者：
J. Choi;J. Y. Lee;Y. Kim
在Si（100）衬底上的非晶YMnO_3薄膜在870 °C干燥氧气气氛中晶化过程中，在YMnO_3和Si衬底之间发现了一层纳米沉淀物。点阵图像处理以及高分辨率透射电子显微镜表明，纳米沉淀层是立方Y2 O3相。此外，它表明，自然氧化物被消耗的反应与Y原子。该[111] Y2 O3层表现出与c轴取向的（0001）YMnO 3的局部外延关系。Y2 O3相的形成和YMnO 3/Si界面处自然氧化物的消耗是由于Y原子在O2气氛中热处理过程中比Mn更容易氧化。
During the crystallization of amorphous YMnO3 thin film on Si (100) at 870 °C in a dry O2 ambient, a nanoprecipitate layer was found between the YMnO3 and the Si substrate. Lattice image processing as well as high-resolution transmission electron microscopy showed that the nanoprecipitate layer was a cubic Y2O3 phase. Also, it showed that a native oxide was consumed by the reaction with the Y atoms. This [111] Y2O3 layer exhibited a local epitaxial relationship to the c-axis oriented (0001) YMnO3. The formation of Y2O3 phase and the consumption of native oxide at the YMnO3/Si interface are due to the Y atom which is better than Mn in its ability to oxidize during heat treatment in O2 ambient.