Generation of hole traps in thin silicon oxide layers under high‐field electron injection
Generation of hole traps in thin silicon oxide layers under high‐field electron injection
复制标题
高场电子注入下薄氧化硅层中空穴陷阱的产生
DOI：
10.1063/1.116026
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发表时间：
1996
影响因子：
4
通讯作者：
C. Viswanathan
中科院分区：
文献类型：
--
作者：
T. Brożek;C. Viswanathan
这封信报告了对硅上热二氧化硅层中一种新的退化机制的观察，即在金属氧化物半导体（MOS）结构的高场应力下产生空穴陷阱。在高场Fowler Nordheim应力之后，通过在p沟道MOS晶体管的9 nm氧化物中注入衬底热空穴，然后在氮气中进行标准金属化后退火，观察到由于新生成的空穴陷阱而导致的过量空穴捕获。所产生的陷阱的浓度具有弱的应力极性依赖性，并且在降解应力期间随着电子注量而增加。开关氧化场下的弛豫行为表明空穴俘获位置的性质不同于反常正电荷中心。
The letter reports an observation of a new degradation mechanism in thermal silicon dioxide layers on silicon, namely generation of hole traps under high‐field stressing of metal‐oxide‐semiconductor (MOS) structure. Excess hole trapping due to newly generated hole traps is observed by substrate hot‐hole injection in 9 nm oxide of p‐channel MOS transistors after high‐field Fowler‐Nordheim stress followed by standard post‐metallization annealing in nitrogen. The concentration of generated traps has a weak stress‐polarity dependence and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers.