Combined SEM-CL and STEM investigation of green InGaN quantum wells
Combined SEM-CL and STEM investigation of green InGaN quantum wells
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DOI：
10.1088/1361-6463/abddf8
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发表时间：
2021-04-22
影响因子：
3.4
通讯作者：
Oliver, R. A.
中科院分区：
文献类型：
--
作者：
Ding, B.;Jarman, J.;Oliver, R. A.
用横截面扫描电子显微镜(STEM)和平面阴极发光(CL)研究了不同温度下生长的InGaN/GaN量子阱(QW)绿光发射样品的微结构。具有最低InGaN生长温度的样品在样品表面的化学发光强度呈现出微尺度的变化。使用STEM对这些区域进行分析，观察到的较暗的斑块并不对应于任何可观察到的扩展缺陷。相反，它们与量子线中总势垒宽度波动幅度的变化有关，发射越亮的区域表现出高密度的这种波动，而较暗的区域被认为具有更均匀的厚度的InGaN量子线。
The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view cathodoluminescence (CL). The sample with the lowest InGaN growth temperature exhibits microscale variations in the CL intensity across the sample surface. Using STEM analysis of such areas, the observed darker patches do not correspond to any observable extended defect. Instead, they are related to changes in the extent of gross-well width fluctuations in the QWs, with more brightly emitting regions exhibiting a high density of such fluctuations, whilst dimmer regions were seen to have InGaN QWs with a more uniform thickness.