Microwave-induced zero-resistance states in a high-mobility two-subband electron system
Microwave-induced zero-resistance states in a high-mobility two-subband electron system
复制标题
高迁移率双子带电子系统中微波诱导的零电阻态
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
A. Bakarov
中科院分区：
文献类型：
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作者：
A. Bykov;A. V. Goran;A. Bakarov
在这项研究中，一个选择性掺杂的GaAs/AlAs异质结构被用来制造一个高迁移率的两个子带电子系统，具有显着不同的子带中的电子浓度。我们观察到微波光电阻在高数量的磁子带间振荡（MISO）。所研究的系统演示了微波诱导电阻振荡（MIRO）和MISO干扰。在所研究的两个子带系统中的MIRO出现在较低的磁场相比，MISO。这是一个指示的一些额外的机制，存在于两个子带系统，是负责在低磁场的MISO振幅阻尼，而它不影响MIRO振幅。在微波辐射下，在MISO最大值附近的窄磁场范围内，研究中的系统中出现零电阻状态。
In this study, a selectively-doped GaAs/AlAs heterostructure was used to fabricate a high-mobility two-subband electronic system with a substantially different concentration of electrons in the subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference. The MIRO in the studied two-subband system appears in lower magnetic fields compared to the MISO. This is an indication of some additional mechanism that exists in the two-subband system and is responsible for the MISO amplitude damping in low magnetic fields, while it does not affect the MIRO amplitude. Zero resistance states appear in the system under study under microwave irradiation in a narrow range of magnetic fields near the MISO maxima.