Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons

Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons
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通过抑制电子混合效应实现超时间分辨率

DOI:
10.1109/ted.2022.3168617
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发表时间:
2022
影响因子:
3.1
通讯作者:
Edoardo Charbon
Edoardo Charbon
中科院分区:
工程技术2区
文献类型:
--
作者:
Nguyen Hoai Ngo;Takeharu Goji Etoh;Kazuhiro Shimonomura;Taeko Ando;Yoshiyuki Matsunaga;Takayoshi Shimura;Heiji Watanabe;Hideki Mutoh;Yoshinari Kamakura;Edoardo Charbon

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硅(Si)图像传感器的理论时间分辨率极限为11.1ps。超时间分辨率(STR)被定义为小于该限制的帧间隔。突发图像传感器的时间分辨率受到从不同起始位置行进的信号电子的“混合”的显著影响。例如,入射到光电二极管(PD)的表面的光子的穿透深度呈指数地分散,导致来自不同深度的光电子在另一端混合,这导致到达时间的分布。时间分辨率与到达时间的标准偏差成比例。针对STR成像,本文提出了抑制信号电子传播过程中各种混合现象的措施:1)锗(Ge)可见光PD,以实际消除穿透深度分布引起的垂直混合效应; 2)倒金字塔PD,以有效抑制水平混合,保持100%的填充因子; 3)在垂直壁上具有负电势的标准柱PD,以挤压落在前侧上的引导门上的电子的轨迹束;以及4)电阻引导门,以使电势分布线性化,从而使水平漂移速度最大化,从而使与被挤压的电子束的混合最小化。
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) is defined as a frame interval less than this limit. The temporal resolution of burst image sensors is significantly affected by “mixing” of signal electrons traveling from different starting positions. For example, the penetration depths of photons incident to a surface of a photodiode (PD) disperse exponentially, resulting in mixing of the photoelectrons from different depths at the other end, which causes a distribution of the arrival times. The temporal resolution is proportional to the standard deviation of the arrival time. Toward STR imaging, this article proposes measures to suppress various mixing phenomena during the travel of the signal electrons: 1) a germanium (Ge) PD for visible light to practically eliminate the effect of vertical mixing caused by the distribution of the penetration depth; 2) an inverted pyramid PD to efficiently suppress the horizontal mixing, keeping a 100% fill factor; 3) a standard column PD with negative potential on the vertical walls to squeeze the trajectory bundle of electrons falling on the guide gate on the front side; and 4) a resistive guide gate to linearize the potential profile to maximize the horizontal drift velocity to minimize the mixing together with the squeezed electron bundle.