Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm
Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm
复制标题
DOI：
10.1063/1.1316064
复制
发表时间：
2000-10
影响因子：
4
通讯作者：
R. Curry;W. Gillin;A. Knights;R. Gwilliam
中科院分区：
文献类型：
--
作者：
R. Curry;W. Gillin;A. Knights;R. Gwilliam
在硅衬底上制作了室温下工作的1.5 μm发光二极管。该器件使用含铒有机发光二极管（OLED）结构，其利用p++硅作为空穴注入接触。该OLED使用N，N′-二苯基-N，N′-双（3-甲基）-1，1 ′-联苯-4，4 ′-二胺作为空穴传输层，三（8-羟基喹啉）铒作为电子传导和发射层。
1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p++ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′-diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer.