Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency
Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency
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DOI：
10.1063/1.2741052
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发表时间：
2007-05
影响因子：
4
通讯作者：
J. Zhong;H. Chen;G. Saraf;Yicheng Lu;C. K. Choi;J. Song;D. Mackie;H. Shen
中科院分区：
文献类型：
--
作者：
J. Zhong;H. Chen;G. Saraf;Yicheng Lu;C. K. Choi;J. Song;D. Mackie;H. Shen
研究了一种集成的氧化锌纳米尖端/GaN发光二极管(LED)的光提取增强。该器件由掺镓氧化锌(GZO)透明导电层的GaN发光二极管和生长在GZO上的用于取光的氧化锌纳米尖端组成。与传统的Ni/Au p-金属LED相比，纳米氧化锌/GZO/GaN发光二极管的输出功率提高了1.7倍。较高的发射效率归因于ZnO/GaN多层膜中光的透过率和散射增强。
Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni∕Au p-metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnO∕GaN multilayer.