Electric field-induced change in the crystal structure of MOCVD-Pb(Zr,Ti)O3 films near the phase boundary
Electric field-induced change in the crystal structure of MOCVD-Pb(Zr,Ti)O3 films near the phase boundary
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DOI：
10.7567/1347-4065/ab37ef
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发表时间：
2019-08
影响因子：
1.5
通讯作者：
Hidehisa Inoue;Takao Shimizu;H. Funakubo
中科院分区：
文献类型：
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作者：
Hidehisa Inoue;Takao Shimizu;H. Funakubo
研究了Pb（ZrxTi 1-x）O3薄膜在极化后和恒电场作用下晶体结构的变化。采用脉冲金属有机化学气相沉积法在（100）CSrRuO 3/（100）CLaNiO 3/（111）Pt/TiO 2/SiO2/Si衬底上制备了厚度约为1.5 μm的（100）T/（001）T/（100）R取向的Pb（ZrxTi 1-x）O3薄膜，薄膜中Zr/（Zr + Ti）比为0.54-0.67。增加Zr/（Zr + Ti）比提供了膜的组成相从单相四方体到四方体和菱形体相的混合物，最后到单相菱形体的变化。所有的薄膜的晶体结构改变后，极化过程中，并在电场下，以各种方式根据Zr/（Zr + Ti）比的薄膜，包括晶格伸长，域切换，和相变。特别地，来自菱面体相的单峰被极化过程和施加的电场不对称地加宽，这表明（100）取向的菱面体相可能变为（001）取向的四面体相。
The change in the crystal structure after poling and under an constant electric field was investigated for Pb(ZrxTi1-x)O3 films. The preparation of approximately 1.5 μm thick (100)T/(001)T/(100)R-oriented Pb(ZrxTi1-x)O3 films with a Zr/(Zr + Ti) ratio of 0.54–0.67 took place on (100)CSrRuO3/(100) CLaNiO3/(111)Pt/TiO2/SiO2/Si substrates by pulsed metal organic chemical vapor deposition. Increasing Zr/(Zr + Ti) ratio provides a change in the constituent phases of the films from single-phase tetragonal to a mixture of tetragonal and rhombohedral phases, and finally, to single-phase rhombohedral. The crystal structure of all films changed after the poling process and under an electric field in various ways according to the Zr/(Zr + Ti) ratios of the films; including lattice elongation, domain switching, and phase change. In particular, a single peak from the rhombohedral phase is asymmetrically broadened by both the poling process and an applied electric field suggesting that a (100)-oriented rhombohedral phase presumably changed to a (001)-oriented tetragonal phase.