Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry
Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry
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DOI：
10.1116/1.3466811
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发表时间：
2010-07
期刊：
影响因子：
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通讯作者：
R. Dylewicz;Richard M. De La Rue;R. Wasielewski;P. Mazur;G. Mezősi;A. C. Bryce
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文献类型：
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作者：
R. Dylewicz;Richard M. De La Rue;R. Wasielewski;P. Mazur;G. Mezősi;A. C. Bryce
电感耦合等离子体干法刻蚀技术已被用于在多种InP基材料上制备细节距图案。研究了等离子体化学成分(Cl2/Ar/N_2混合气体中的N_2含量)对侧壁轮廓的根切程度和表面形貌的影响。刻蚀工艺条件的优化在保持良好刻蚀速率(560-730 nm/min)的同时，在侧壁上产生了强烈的钝化效果，以及高度各向异性的工艺。采用倍半硅氧烷作为抗蚀剂/硬掩膜的单步刻蚀，获得了高宽高比(高达30：1)的特征。低的等离子体激发功率(400 W的电感耦合等离子体机器工作功率)和中等的离子能量(120 W的射频功率)被用来最小化刻蚀引起的损伤并提供低的散射损耗。低损耗(<；0.3dB/mm)脊形光波导、高反射率和高波长选择性(Δλ=2 nm)产生了周期为236 nm的侧壁Gr.
Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide range of InP-based materials has been developed. The effect of plasma chemistry (the N2 content in the total Cl2/Ar/N2 gas mixture) on the degree of undercut in the sidewall profile and surface morphology has been studied. Optimization of the etch process conditions produces strong passivation effects on the sidewalls, together with a highly anisotropic process, while still maintaining a good etch rate (560–730 nm/min). Single-step etching using hydrogen silsesquioxane as a resist/hard-mask resulted in high aspect ratio features being obtained (up to 30:1). Low plasma excitation power (inductively coupled plasma machine operating power of 400 W) and moderate ion energy (rf power of 120 W) were utilized to minimize etch-induced damage and provide low scattering losses. Low-loss (<0.3 dB/mm) optical ridge waveguides and high reflectivity and high-wavelength selectivity (Δλ=2 nm) results with 236 nm period sidewall gr...