Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2
Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2
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DOI：
10.1002/adma.201600560
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发表时间：
2016-09-07
影响因子：
29.4
通讯作者：
Bratschitsch, Rudolf
中科院分区：
文献类型：
--
作者：
Kern, Johannes;Niehues, Iris;Bratschitsch, Rudolf
在两个单晶金纳米棒之间的纳米级间隙处创建了单层WSe2中的单光子发射器。原子薄半导体符合金属纳米结构，并在间隙位置弯曲。诱导应变导致在间隙内形成局部势阱。单光子发射器的定位精度优于140 nm。
Single-photon emitters in monolayer WSe2 are created at the nanoscale gap between two single-crystalline gold nano rods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single-photon emitters are localized there with a precision better than 140 nm.