Synthesis of Large-Area Atomically Thin BiOI Crystals with Highly Sensitive and Controllable Photodetection
Synthesis of Large-Area Atomically Thin BiOI Crystals with Highly Sensitive and Controllable Photodetection
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具有高灵敏度和可控光电探测能力的大面积原子薄 BiOI 晶体的合成
DOI：
10.1002/adfm.201900129
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发表时间：
2019
影响因子：
19
通讯作者：
Liu Zhengtang
中科院分区：
文献类型：
--
作者：
Zeng Wei;Li Jie;Feng Liping;Pan Haixi;Zhang Xiaodong;Sun Hanqing;Liu Zhengtang
与二维元素和二元化合物相比，三元层状化合物具有更好的物理和化学性质，在电子和光电子器件中具有潜在的应用前景。在这里，首先通过空间限制化学气相沉积合成了域尺寸高达100 µm的2D三元层状BiOI晶体。基于生长的BiOI纳米片的光电探测器对473 nm光表现出高灵敏度。BiOI光电探测器在473 nm处的Ion/Ioff比和探测率分别达到1 × 105和8.2 × 1011 Jones。特别地，由于氧空位的引入，光电探测器的接触和暗电流可以通过254 nm紫外光照射来控制。大面积原子级薄BiOI的简便合成及其通过紫外光照射的可控性能表明，2D BiOI晶体是基础研究和光电应用的一种有前途的材料。
Compared to the most studied 2D elements and binary compounds, ternary layered compounds with more adjustable physical and chemical properties have exhibited potential applications in electronic and optoelectronic devices. Here, 2D ternary layered BiOI crystals are synthesized first with a domain size up to 100 µm via space‐confined chemical vapor deposition. The photodetectors based on the as‐grown BiOI nanosheets demonstrate high sensitivity to 473 nm light. TheIon/Ioffratio and detectivity of BiOI photodetectors can reach up to 1 × 105and 8.2 × 1011Jones at 473 nm, respectively. Particularly, the contact and dark current of the photodetectors can be controlled by 254 nm ultraviolet light irradiation due to the introduction of oxygen vacancies. The facile synthesis of large‐area atomically thin BiOI and its controllable performance by ultraviolet light irradiation suggest that 2D BiOI crystal is a promising material for fundamental investigations and optoelectronic applications.