Over 11% Efficient CuGaSe 2 Solar Cells Without Using KCN Treatment
Over 11% Efficient CuGaSe 2 Solar Cells Without Using KCN Treatment
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超过%2011%%20效率%20CuGaSe%20%20%20%20%20%20%20%20%20%20%20%202%20%20%20%20%20%20%20%20%20
DOI：
10.1002/solr.202200766
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发表时间：
2022
期刊：
影响因子：
7.9
通讯作者：
Xudong Xiao
中科院分区：
文献类型：
--
作者：
Junbo Gong;Duoqi Gao;Zengyang Ma;Xuke Yang;Junjun Zhang;Xinxing Liu;Chao Chen;Jiang Tang;Bo Da;Jianmin Li;Guojia Fang;Xudong Xiao
CuGaSe2(CGS)的带隙能为1.68eV，理论上非常适合与硅或Cu(In,Ga)Se2太阳能电池串联。然而，由于表面缺陷数量较多，高性能CGS通常依赖于KCN表面处理，这是一种高毒工艺，限制了其进一步发展。在此，通过尽可能减少CGS层暴露于空气的时间并开发新的吸收剂生长程序来减少表面CuxSe的生成，在不使用KCN的情况下成功地增加了晶粒尺寸并减少了界面复合。结合简单的退火工艺，在没有任何传统使用的KCN处理的情况下，成功降低了缺陷浓度，显着拓宽了耗尽宽度，将功率转换效率提升至11.05%。这项工作为制造高效 CGS 太阳能电池提供了一种无毒、低污染的方法。
CuGaSe2(CGS) has a bandgap energy of 1.68 eV and is theoretically very suitable to be in tandem with silicon or Cu(In,Ga)Se2solar cells. However, due to the high quantity of surface defects, high‐performance CGS usually relies on a KCN surface treatment, which is a high‐toxic process and restricts its further development. Herein, by reducing the exposure time to air of the CGS layer as far as possible and developing a new absorber growth procedure to reduce the surface CuxSe generation, grain size is successfully increased and interface recombination is reduced without the use of KCN. Combined with a simple annealing process, the defect concentration is successfully decreased and the depletion width is broadened dramatically and the power conversion efficiency is promoted to 11.05% without any traditionally used KCN treatment. This work provides a nontoxic and low‐pollution way to fabricate high‐efficient CGS solar cells.