Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4 Substrates by Pulsed-Laser Deposition
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DOI：
10.1143/jjap.45.l457
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发表时间：
2006-04
影响因子：
1.5
通讯作者：
Guoqiang Li;J. Ohta;K. Okamoto;A. Kobayashi;H. Fujioka
中科院分区：
文献类型：
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作者：
Guoqiang Li;J. Ohta;K. Okamoto;A. Kobayashi;H. Fujioka
我们在室温(RT)下在MgAl2O4(111)衬底上生长了GaN薄膜，并研究了薄膜的结构特性。在由镁铝氧化物陶瓷制成的箱体中，通过1000℃的热处理，获得了具有阶梯和梯形结构的镁铝氧化物原子平整表面。研究发现，即使在RT条件下，GaN(0001)也在原子平坦的MgAl2O4(111)表面上外延生长。GaN外延层与衬底之间的外延关系为GaN[1120]∥。GaN薄膜具有清晰的六重对称性，没有30°的旋转区。在RT生长的情况下，GaN与MgAl2O4之间的界面反应被完全抑制。
We have grown GaN films on MgAl2O4(111) substrates at room temperature (RT) and investigated the structural properties of the films. The atomically flat surfaces of MgAl2O4 with a step and terrace structure are obtained by annealing at 1000 °C in a box made of ceramic MgAl2O4. It is found that GaN(0001) grows epitaxially on atomically flat MgAl2O4(111) surfaces even at RT. The epitaxial relationship between the GaN epilayer and the MgAl2O4 substrate is GaN[1120]∥MgAl2O4[011]. GaN films have a clear six fold symmetry without 30° rotational domains. The interfacial reaction between GaN and MgAl2O4 is completely suppressed in the case of RT growth.