A 1.14GHz piezoelectrically transduced disk resonator
A 1.14GHz piezoelectrically transduced disk resonator
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1.14GHz 压电换能盘谐振器
DOI：
10.1109/memsys.2005.1453902
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
W. Tang
中科院分区：
文献类型：
--
作者：
Le Yan;M. Wu;W. Tang
本文介绍了一种具有静电频率调谐能力的1.14GHz压电驱动圆盘谐振器的设计、仿真、制作和测试结果。谐振器的设计是通过最小化锚梁的数量和尺寸来抑制锚损失。劈顶电极用于驱动目标模式，实现最大的机电耦合，同时最小化运动阻力。该器件由SOI晶圆制成，采用6掩膜工艺，避免了沉积结构硅层和牺牲氧化层的需要。因此，最大加工温度保持在250/spl℃以下，允许后cmos兼容。在直径为30/spl mu/m的圆盘谐振器的第三模处，测量到的最高谐振频率为1.14GHz。初步测量表明，在大气压下，单端口设备的质量因子(Q)范围为85至215。
This paper presents the design, simulation, fabrication, and testing results of a 1.14GHz piezoelectrically actuated disk resonator with electrostatic frequency tuning capability. The resonator is designed to suppress anchor loss by minimizing the number of anchor beams as well as their sizes. Split-top electrodes are used to drive the target mode and to achieve maximum electromechanical coupling while minimizing motional resistance. The devices are fabricated from SOI wafers using a 6-mask process, avoiding the need to deposit the structural silicon layer and sacrificial oxide layer. As a result, the maximum processing temperature is kept below 250/spl deg/C, allowing post-CMOS compatibility. The highest measured resonant frequency is 1.14GHz at the third mode from a disk resonator of 30/spl mu/m diameter. Preliminary measurements indicated quality factors (Q) ranging from 85 to 215 for the one-port device under atmospheric pressure.