Design of a superconducting MEM shunt switch for RF applications
Design of a superconducting MEM shunt switch for RF applications
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用于射频应用的超导 MEM 并联开关的设计
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
G. Larkins
中科院分区：
文献类型：
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作者：
Y. Hijazi;Y. Vlasov;G. Larkins
我们设计、模拟和优化了一个电容分流的射频微机电（MEM）超导开关。该开关由高温超导（HTS）YBa/sub 2/Cu/sub 3/O/sub 7/共面波导（CPW）结构组成，该结构具有悬挂在中心导体上方并锚定在接地层（气隙3 /spl mu/m）处的金膜桥。一薄层BaTiO/sub 3/，在一个补丁的形状，位于顶部的中心导体和下面的悬浮金膜。在施加电压下，金桥膜向下致动并在BaTiO/sub 3/的介电层的顶部塌陷，从而电容性地将RF信号分流到地。使用Sonnet，进行仿真以优化开关设计。这些结果的分析揭示了有趣的开关机械和电气参数之间的关系，本文讨论和分析这些结果，沿着与测量数据。
We have designed, simulated and optimized a capacitively shunted RF MicroElectroMechanical (MEM) superconducting switch. The switch consists of a High Temperature Superconducting (HTS) YBa/sub 2/Cu/sub 3/O/sub 7/ coplanar waveguide (CPW) structure with a gold membrane bridge suspended above the center conductor and anchored at the ground planes (air gap 3 /spl mu/m). A thin layer of BaTiO/sub 3/, in the shape of a patch, lies on top of the center conductor and underneath the suspended gold membrane. Under an applied voltage, the gold bridge membrane actuates downwards and collapses on top of the dielectric layer of BaTiO/sub 3/ thereby capacitively shunting the RF signal to ground. Using Sonnet, simulations were conducted to optimize the switch design. An analysis of these results revealed interesting relationships between the switch mechanical and electrical parameters; this paper discusses and analyzes these results, along with measured data.