Comparative study of two atomic layer etching processes for GaN
Comparative study of two atomic layer etching processes for GaN
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GaN两种原子层刻蚀工艺的对比研究
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
H. Mariette
中科院分区：
文献类型：
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作者：
C. Mannequin;C. Vallée;K. Akimoto;T. Chevolleau;C. Durand;C. Dussarrat;T. Teramoto;E. Gheeraert;H. Mariette
采用标准的电感耦合等离子体反应离子刻蚀系统实现了Ga极性GaN（0001）的原子层刻蚀（ALE）。后续的过程是在吸附步骤中使用Cl 2对表面进行改性。对于活化步骤，作者比较了两种稀有气体等离子体，即Ar和Kr，并显示了后者的更大和定义良好的ALE窗口。GaN的ALE是通过蚀刻梅萨结构与光刻胶掩蔽证明。获得了两个单层的每个循环的恒定蚀刻速率。通过改变吸附时间、活化时间和源功率，得到了该自限性过程的实验条件。这为纳米纤维提供了一种原子级工艺，对GaN表面有显著改善。
Atomic layer etching (ALE) of Ga-polar GaN (0001) using a standard inductively coupled plasma-reactive ion etching system is achieved in this work. The sequential process is using Cl2 to modify the surface in the adsorption step. For the activation step, the authors compare two rare gas plasmas, namely, Ar and Kr, and show a much larger and well-defined ALE window for the latter. The ALE of GaN is demonstrated by etching mesa structures masked with a photoresist. A constant etching rate per cycle of two monolayers is obtained. The experimental conditions of this self-limited process are found by changing both the adsorption and activation times, together with the source power. This provides an atomic-scale process for nanofabrication, with significant improvements to the GaN surface.