Optically controlled characteristics of Schottky gated poly(3‐alkylthiophene) field effect transistor
Optically controlled characteristics of Schottky gated poly(3‐alkylthiophene) field effect transistor
复制标题
肖特基门控聚(3-烷基噻吩)场效应晶体管的光控特性
DOI：
10.1063/1.349008
复制
发表时间：
1991
影响因子：
3.2
通讯作者：
R. Sugimoto
中科院分区：
文献类型：
--
作者：
K. Yoshino;H. Takahashi;Keiro Muro;Y. Ohmori;R. Sugimoto
利用含光解二苯基碘六氟砷酸盐（Ph 2 IAsF 6）的聚（3-烷基噻吩）制备了肖特基栅场效应晶体管（FET）。当光照射在FET上时，FET特性急剧改变，这可以用由于Ph 2 IAsF 6的光解离而增强的载流子密度和载流子迁移率来解释。讨论了载流子密度的提高与载流子迁移率的提高之间的关系。还提出了由含有Ph 2 IAsF 6的聚（3-烷基噻吩）构成的单片场效应晶体管。
A Schottky gated field effect transistor (FET) has been prepared utilizing poly(3‐alkylthiophene) containing photodissociative diphenyliodonium hexafluoroarsenate (Ph2IAsF6). Upon irradiation of light on the FET, the FET characteristic has changed drastically which can be explained in terms of enhanced carrier density and carrier mobility due to the photodissociation of Ph2IAsF6. The relation between enhancement of carrier density and that of carrier mobility has been discussed. Monolithic field effect transistors composed of poly(3‐alkylthiophene) containing Ph2IAsF6 have been also proposed.