Observation of higher order parametric x-ray spectra in mosaic graphite and single silicon crystals.
Observation of higher order parametric x-ray spectra in mosaic graphite and single silicon crystals.
复制标题
镶嵌石墨和单硅晶体中高阶参量 X 射线光谱的观察。
DOI：
10.1103/physrevlett.71.704
复制
发表时间：
1993
影响因子：
8.6
通讯作者：
Ho
中科院分区：
文献类型：
--
作者：
Fiorito;Rule;Maruyama;DiNova;Evertson;Osborne;Snyder;Rietdyk;Piestrup;Ho
我们观察到在5—40 keV范围内，由90 MeV电子束与马赛克石墨和单硅晶体相互作用产生的参数x辐射（PXR）光谱高达8阶（[ital n]）。石墨的产率和强度比[ital I]([ital n][ge]2)/[ital I]（[ital n]=1）与马赛克晶体的PXR理论不一致。相比之下，硅中的强度比接近PXR理论对完美晶体的预测。在硅和石墨中测量的光谱线带宽与理论预测一致。
We have observed up to 8 orders ([ital n]) in the spectra of parametric x-radiation (PXR) in the range 5--40 keV, produced by the interaction of a 90 MeV electron beam with mosaic graphite and single silicon crystals. The measured yields and intensity ratios, [ital I]([ital n][ge]2)/[ital I]([ital n]=1), in graphite are not in agreement with the theory of PXR for mosaic crystals. In comparison, the ratios of intensities in silicon are close to the predictions of PXR theory for perfect crystals. The bandwidths of spectral lines measured in both silicon and graphite are in good agreement with theoretical predictions.