Novel realisation of a broadband high-efficiency continuous class-F power amplifier

Novel realisation of a broadband high-efficiency continuous class-F power amplifier
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发表时间:
2011-12
期刊:
2011 6th European Microwave Integrated Circuit Conference
影响因子:
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通讯作者:
Neal Tuffy;A. Zhu;T. Brazil
Neal Tuffy;A. Zhu;T. Brazil
中科院分区:
其他
文献类型:
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作者:
Neal Tuffy;A. Zhu;T. Brazil

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这项工作概述了宽带连续F类功率放大器的分析和设计过程。波形分析用于确定在所需带宽上保持高效率的最敏感参数。然后采用设计方法来控制感兴趣频带上的主要参数,同时保持最大基本输出功率。利用商用的GaN Cree 10W HEMT晶体管,研制出了工作在20%带宽上的放大器。在2.152.65 GHz的频段内,输出功率大于11.4W,效率在65-76%之间。在平均输出功率为13.5W的情况下,获得了70.5%的平均漏极效率和65%的PAE。
This work outlines the analysis and design procedure employed for the realisation of a broadband Continuous Class-F power amplifier. Waveform analysis is used in determining the most sensitive parameters for maintaining high efficiency over a desired bandwidth. A design methodology is then employed for control of the dominant parameters over the band of interest, while preserving maximum fundamental output power. By using a commercially available GaN Cree 10W HEMT transistor, an amplifier was fabricated which is operational over a 20% bandwidth. Greater than 11.4W of output power is found with efficiencies between 65–76% measured over the band from 2.152.65GHz. An average drain efficiency of 70.5% and PAE of 65% is obtained with a corresponding average output power of 13.5W.