Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods
Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods
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DOI：
10.1088/0953-8984/20/8/085201
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发表时间：
2008-02-27
影响因子：
2.7
通讯作者：
Litton, W.
中科院分区：
文献类型：
--
作者：
Alivov, Ya I.;Xiao, B.;Litton, W.
采用射频溅射法在GaN衬底上制备了n-ZnO/n-GaN异质结，并通过I-V-T和EBIC测试研究了异质结的电学性质。n-ZnO/n-GaN二极管表现出高度整流行为，在+/- 5 V下正向和反向电流比约为10（6）。从I-V-T测量的分析中，导出了类似于0.62 eV的导带偏移。从EBIC测量，ZnO的少数载流子扩散长度估计在0.125-0.175 μ m的范围内，而激活能被导出为0.462 +/- 0.073 V，并归因于陷阱。
Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current-voltage (I-V-T) characterization and electron beam induced current (EBIC) measurements. The n-ZnO/n-GaN diodes showed highly rectifying behavior with a forward and reverse current ratio of about 10(6) at +/- 5 V. From the analysis of I-V-T measurements, a conduction band offset of similar to 0.62 eV was derived. From EBIC measurements, the minority carrier diffusion length of ZnO was estimated to lie in the range 0.125-0.175 mu m, while an activation energy was derived as 0.462 +/- 0.073 V and was attributed to the traps.