Inverse Scattering Method Design of Regrowth-Free Single-Mode Semiconductor Lasers Using Pit Perturbations for Monolithic Integration
Inverse Scattering Method Design of Regrowth-Free Single-Mode Semiconductor Lasers Using Pit Perturbations for Monolithic Integration
复制标题
利用凹坑扰动进行单片集成的免再生单模半导体激光器的逆散射方法设计
作者：
K. Shortiss;M. Dernaika;L. Caro;M. Seifikar;F. Peters
逆散射方法用于设计无再生单模激光器，使用蚀刻深度不敏感的凹坑作为激光腔中的扰动。这些坑扰动是在每个激光器的波导中蚀刻到激光材料中量子阱以下 0.8$mu ext{m}$ 深度的圆形孔，并用于代替更常用于光子可集成激光器中的光学反馈的蚀刻深度敏感槽。我们比较了实现器件目标波长所需的这些凹坑扰动的数量，并报告了强烈的单模激光器（大于 40 dB）。然后设计设备以 1545 nm 至 1565 nm 之间的波长发射激光，以证明设计的波长精度。使用热调谐将器件波长调谐到 2 nm 以上，同时保持大于 30 dB 的边模抑制比。
An inverse scattering method is used to design regrowth-free single-mode lasers, using etch depth insensitive pits as perturbations in the laser cavity. These pit perturbations are circular holes etched into the waveguide of each laser to a depth 0.8$mu ext{m}$ below the quantum wells in the laser material, and are used in place of the etch depth sensitive slots more commonly implemented for optical feedback in photonic integrable lasers. We compare the number of these pit perturbations required to achieve the target wavelength of the devices, and report strongly single mode lasers (greater than 40 dB). Devices were then designed to lase at wavelengths between 1545 nm and 1565 nm, to demonstrate the wavelength accuracy of the designs. Thermal tuning was used to tune device wavelength over 2 nm, while maintaining side mode suppression ratios greater than 30 dB.