Tunnel junctions with AlN barriers and FeTaN electrodes
Tunnel junctions with AlN barriers and FeTaN electrodes
复制标题
具有 AlN 屏障和 FeTaN 电极的隧道结
DOI：
10.1063/1.1356714
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发表时间：
2001
影响因子：
3.2
通讯作者：
J. Soares
中科院分区：
文献类型：
--
作者：
Jianguo Wang;S. Cardoso;P. Freitas;P. Wei;N. Barradas;J. Soares
研究了具有AlN(AlNxOy)势垒、CoFe和FeTaN电极的隧道结。利用射频氮气等离子体对10A厚的铝层进行氮化，形成了AlN势垒。用卢瑟福背散射光谱(RBS)测定了沉积在DLC衬底上的特殊制备的阻挡层中的氮和氧含量。RBS结果表明，屏障中的O2掺入量不到10%。由10A厚的铝层氮化形成的顶钉扎结(CoFe电极)在氮化时间从30次增加到200时，其电阻×面积积从73 Ω μm~2增加到8.5 kΩ μm~2，相应的隧道磁阻从13%增加到33%。还制作了带有FeTaN电极的底钉扎结。在225 °C下热处理30min后，TMR信号最大为17%。在这两种情况下(CoFe或FeTaN电极)，在250 °C以上退火时，TMR都会退化。
Tunnel junctions with AlN (AlNxOy) barriers and CoFe and FeTaN electrodes were studied. The AlN barrier was formed by nitridizing a 10 A thick Al layer using radio frequency N2 plasma. The nitrogen and oxygen content in the barriers was determined by Rutherford backscattering spectroscopy (RBS) on specially prepared barriers deposited on DLC coated substrates. RBS results indicate less than 10% O2 incorporation in the barrier. Top-pinned junctions formed by nitridizing a 10 A thick Al layer (CoFe electrodes) show resistance×area products from 73 Ω μm2 to 8.5 kΩ μm2 for increasing nitridation times from 30 to 200 s, with corresponding tunneling magnetoresistance (TMR) values from 13% to 33%. Bottom-pinned junctions with FeTaN electrodes were also fabricated. Maximum TMR signal is 17% after anneal at 225 °C for 30 min. In both cases (CoFe or FeTaN electrodes), TMR degrades for anneals above 250 °C.