Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
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电子隧道穿过氢封端 Si(100) 表面上形成的超薄栅极氧化物
DOI：
10.1143/jjap.33.395
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发表时间：
1994
影响因子：
1.5
通讯作者：
Masataka Hirose Masataka Hirose
中科院分区：
文献类型：
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作者：
M. Hiroshima;Tatsuhiro Yasaka;Seiichi Miyazaki Seiichi Miyazaki;Masataka Hirose Masataka Hirose
在化学清洗过的Si（100）表面上生长的超薄栅极氧化物的电流传输已经被系统地研究了。结果表明，通过厚度小于4.2 nm的氧化物的电流由直接隧穿（DT）控制，而通过厚度大于5.1 nm的SiO2的电流主要由Fowler-Nordheim隧穿（FNT）控制。在4.2 ~ 5.1 nm的氧化层厚度范围内，DT在低电场下限制电流，FNT在高电场下限制电流。观察到的隧穿电流用基于WKB近似的Wentzel-Kramers- Brillouin方法进行了定量解释。讨论了硅表面微粗糙度对隧道电流的影响。
Current transport through ultrathin gate oxides grown on chemically cleaned Si(100) surfaces has been systematically investigated. It is shown that current through oxides thinner than 4.2 nm is controlled by direct tunneling (DT), while Fowler-Nordheim tunneling (FNT) predominates in transport through SiO2 thicker than 5.1 nm. In the oxide thickness range between 4.2 and 5.1 nm, DT limits the current at low electric fields and FNT at high fields. The observed tunneling current is quantitatively explained by a theory based on the Wentzel-Kramers- Brillouin method (WKB approximation). Also, the influence of the Si surface microroughness on the tunneling current is discussed.